Produkte > INFINEON TECHNOLOGIES > BAR 65-02L E6327

BAR 65-02L E6327 Infineon Technologies

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Hersteller: Infineon Technologies
Description: RF DIODE PIN 30V 250MW PG-TSLP
Power Dissipation (Max): 250 mW
Current - Max: 100 mA
Supplier Device Package: PG-TSLP-2-1
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 900mOhm @ 10mA, 100MHz
Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SOD-882
Packaging: Tape & Reel (TR)

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Technische Details BAR 65-02L E6327 Infineon Technologies

Description: RF DIODE PIN 30V 250MW PG-TSLP, Power Dissipation (Max): 250 mW, Current - Max: 100 mA, Supplier Device Package: PG-TSLP-2-1, Voltage - Peak Reverse (Max): 30V, Resistance @ If, F: 900mOhm @ 10mA, 100MHz, Capacitance @ Vr, F: 0.8pF @ 3V, 1MHz, Operating Temperature: 150°C (TJ), Diode Type: PIN - Single, Package / Case: SOD-882, Packaging: Tape & Reel (TR).