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BAR66E6433HTMA1

BAR66E6433HTMA1 Infineon Technologies

fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW PG-SOT23
Power Dissipation (Max): 250 mW
Current - Max: 200 mA
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 150V
Resistance @ If, F: 1.8Ohm @ 5mA, 100MHz
Capacitance @ Vr, F: 0.6pF @ 35V, 1MHz
Diode Type: PIN - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details BAR66E6433HTMA1 Infineon Technologies

Description: RF DIODE PIN 150V 250MW PG-SOT23, Power Dissipation (Max): 250 mW, Current - Max: 200 mA, Supplier Device Package: PG-SOT23, Voltage - Peak Reverse (Max): 150V, Resistance @ If, F: 1.8Ohm @ 5mA, 100MHz, Capacitance @ Vr, F: 0.6pF @ 35V, 1MHz, Diode Type: PIN - 1 Pair Series Connection, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).