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BAS116HMFHT116

BAS116HMFHT116 ROHM Semiconductor


datasheet?p=BAS116HMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
Diodes - General Purpose, Power, Switching 100V Vrm; 500mA Ifm Swtch Diode SOT-23
auf Bestellung 126 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.46 EUR
10+ 0.37 EUR
100+ 0.2 EUR
500+ 0.13 EUR
1000+ 0.088 EUR
3000+ 0.079 EUR
9000+ 0.065 EUR
Mindestbestellmenge: 7
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Technische Details BAS116HMFHT116 ROHM Semiconductor

Description: DIODE GEN PURP 80V 215MA SSD3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 215mA, Supplier Device Package: SSD3, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Part Status: Not For New Designs, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V, Qualification: AEC-Q101.

Weitere Produktangebote BAS116HMFHT116

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BAS116HMFHT116 BAS116HMFHT116 Hersteller : Rohm Semiconductor datasheet?p=BAS116HMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 80V 215MA SSD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BAS116HMFHT116 BAS116HMFHT116 Hersteller : Rohm Semiconductor datasheet?p=BAS116HMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 80V 215MA SSD3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA
Supplier Device Package: SSD3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar