BAS16L-QYL Nexperia
| Anzahl | Privatkunde |
|---|---|
| 11+ | 0.31 EUR |
| 17+ | 0.2 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.08 EUR |
| 1000+ | 0.058 EUR |
| 5000+ | 0.046 EUR |
| 10000+ | 0.038 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BAS16L-QYL Nexperia
Description: DIODE STD 100V 215MA DFN10062, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: 150°C, Supplier Device Package: DFN1006-2, Current - Average Rectified (Io): 215mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-882, Packaging: Tape & Reel (TR).
Weitere Produktangebote BAS16L-QYL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BAS16L-QYL | Nexperia USA Inc. |
 Description: DIODE STD 100V 215MA DFN10062Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: DFN1006-2 Current - Average Rectified (Io): 215mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-882 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BAS16L-QYL | Nexperia USA Inc. |
Description: DIODE STD 100V 215MA DFN10062 Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: DFN1006-2 Current - Average Rectified (Io): 215mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Standard Qualification: AEC-Q101 Grade: Automotive Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-882 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BAS16L-QYL | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; DFN1006-2; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DFN1006-2 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.25W Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BAS16L-QYL | Nexperia |
Diode Switching 100V 0.215A 2-Pin DFN T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BAS16L-QYL | Nexperia |
Diode Switching 100V 0.215A 2-Pin DFN T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BAS16L-QYL |
|
Hersteller: Nexperia USA Inc.
Description: DIODE STD 100V 215MA DFN10062
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2
Current - Average Rectified (Io): 215mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Description: DIODE STD 100V 215MA DFN10062
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2
Current - Average Rectified (Io): 215mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS16L-QYL |
|
Hersteller: Nexperia USA Inc.
Description: DIODE STD 100V 215MA DFN10062
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2
Current - Average Rectified (Io): 215mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Description: DIODE STD 100V 215MA DFN10062
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2
Current - Average Rectified (Io): 215mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAS16L-QYL |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN1006-2
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DFN1006-2
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS16L-QYL |
|
Hersteller: Nexperia
Diode Switching 100V 0.215A 2-Pin DFN T/R Automotive AEC-Q101
Diode Switching 100V 0.215A 2-Pin DFN T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BAS16L-QYL |
|
Hersteller: Nexperia
Diode Switching 100V 0.215A 2-Pin DFN T/R Automotive AEC-Q101
Diode Switching 100V 0.215A 2-Pin DFN T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH