BAS16L-QYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: DIODE STD 100V 215MA DFN10062
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2
Current - Average Rectified (Io): 215mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
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Technische Details BAS16L-QYL Nexperia USA Inc.
Description: DIODE STD 100V 215MA DFN10062, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: 150°C, Supplier Device Package: DFN1006-2, Current - Average Rectified (Io): 215mA, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-882, Packaging: Tape & Reel (TR).
Weitere Produktangebote BAS16L-QYL nach Preis ab 0.038 EUR bis 0.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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BAS16L-QYL | Nexperia |
Small Signal Switching Diodes DIODE-SS 100V 150MA DFN-1006-2 |
auf Bestellung 22965 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS16L-QYL | Nexperia USA Inc. |
Description: DIODE STD 100V 215MA DFN10062Current - Reverse Leakage @ Vr: 500 nA @ 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: DFN1006-2 Current - Average Rectified (Io): 215mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Standard Qualification: AEC-Q101 Grade: Automotive Reverse Recovery Time (trr): 4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-882 Packaging: Cut Tape (CT) |
auf Bestellung 20916 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BAS16L-QYL |
![]() |
Hersteller: Nexperia
Small Signal Switching Diodes DIODE-SS 100V 150MA DFN-1006-2
Small Signal Switching Diodes DIODE-SS 100V 150MA DFN-1006-2
auf Bestellung 22965 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 0.31 EUR |
| 17+ | 0.2 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.08 EUR |
| 1000+ | 0.058 EUR |
| 5000+ | 0.046 EUR |
| 10000+ | 0.038 EUR |
| BAS16L-QYL |
![]() |
Hersteller: Nexperia USA Inc.
Description: DIODE STD 100V 215MA DFN10062
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2
Current - Average Rectified (Io): 215mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
Description: DIODE STD 100V 215MA DFN10062
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: DFN1006-2
Current - Average Rectified (Io): 215mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Standard
Qualification: AEC-Q101
Grade: Automotive
Reverse Recovery Time (trr): 4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
auf Bestellung 20916 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 99+ | 0.21 EUR |
| 157+ | 0.13 EUR |
| 500+ | 0.092 EUR |
| 1000+ | 0.065 EUR |
| 2000+ | 0.061 EUR |
| 5000+ | 0.056 EUR |


