BAS16L-QYL NEXPERIA
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DFN1006-2
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.25W
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; DFN1006-2; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: DFN1006-2
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.25W
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
auf Bestellung 8225 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1550+ | 0.046 EUR |
1650+ | 0.044 EUR |
1975+ | 0.037 EUR |
2075+ | 0.035 EUR |
10000+ | 0.033 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BAS16L-QYL NEXPERIA
Description: DIODE GP 100V 215MA DFN1006-2, Packaging: Tape & Reel (TR), Package / Case: SOD-882, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 215mA, Supplier Device Package: DFN1006-2, Operating Temperature - Junction: 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BAS16L-QYL nach Preis ab 0.035 EUR bis 0.41 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BAS16L-QYL | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 215mA; 4ns; DFN1006-2; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: DFN1006-2 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.25W Kind of package: reel; tape |
auf Bestellung 8225 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16L-QYL | Hersteller : Nexperia USA Inc. |
Description: DIODE GP 100V 215MA DFN1006-2 Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: DFN1006-2 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 13223 Stücke: Lieferzeit 10-14 Tag (e) |
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BAS16L-QYL | Hersteller : Nexperia | Diodes - General Purpose, Power, Switching BAS16L-Q/SOD882/SOD2 |
auf Bestellung 9750 Stücke: Lieferzeit 14-28 Tag (e) |
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BAS16L-QYL | Hersteller : NEXPERIA | Diode Switching 100V 0.215A Automotive 2-Pin DFN T/R |
Produkt ist nicht verfügbar |
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BAS16L-QYL | Hersteller : Nexperia | Diode Switching 100V 0.215A Automotive AEC-Q101 2-Pin DFN T/R |
Produkt ist nicht verfügbar |
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BAS16L-QYL | Hersteller : Nexperia | Diode Switching 100V 0.215A Automotive AEC-Q101 2-Pin DFN T/R |
Produkt ist nicht verfügbar |
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BAS16L-QYL | Hersteller : Nexperia USA Inc. |
Description: DIODE GP 100V 215MA DFN1006-2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA Supplier Device Package: DFN1006-2 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |