BAS16LTH-HG3-08 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE STD 100V 250MA DFN10062A
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.076 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BAS16LTH-HG3-08 Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 250MA DFN10062A, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: DFN1006-2A, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote BAS16LTH-HG3-08 nach Preis ab 0.068 EUR bis 0.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BAS16LTH-HG3-08 | Hersteller : Vishay Semiconductors |
Small Signal Switching Diodes SWITCHING DIODE GENPURP DFN1006-2A |
auf Bestellung 16659 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
BAS16LTH-HG3-08 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 100V 250MA DFN10062A Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: DFN1006-2A Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 12779 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| BAS16LTH-HG3-08 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 250mA; 4ns; DFN2; Ufmax: 1.25V; Ifsm: 9A Type of diode: switching Max. forward impulse current: 9A Semiconductor structure: single diode Mounting: SMD Case: DFN2 Max. off-state voltage: 100V Leakage current: 1µA Application: automotive industry Reverse recovery time: 4ns Load current: 0.25A Max. load current: 0.25A Max. forward voltage: 1.25V |
auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
 |
BAS16LTH-HG3-08 | Hersteller : Vishay |
Diode Small Signal Switching 0.25A 2-Pin DFN-A T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
| BAS16LTH-HG3-08 | Hersteller : Vishay |
SWITCHING DIODE GENPURP DFN1006-2A |
Produkt ist nicht verfügbar |