BAS16LTH-HG3-08 Vishay Semiconductors
Hersteller: Vishay SemiconductorsDiodes - General Purpose, Power, Switching SWITCHING DIODE GENPURP DFN1006-2A
auf Bestellung 11752 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 0.52 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.18 EUR |
| 1000+ | 0.11 EUR |
| 2500+ | 0.092 EUR |
| 10000+ | 0.069 EUR |
| 20000+ | 0.06 EUR |
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Technische Details BAS16LTH-HG3-08 Vishay Semiconductors
Description: DIODE GP 100V 250MA DFN1006-2A, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: DFN1006-2A, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BAS16LTH-HG3-08 nach Preis ab 0.083 EUR bis 0.53 EUR
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BAS16LTH-HG3-08 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 100V 250MA DFN1006-2A Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: DFN1006-2A Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8832 Stücke: Lieferzeit 10-14 Tag (e) |
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| BAS16LTH-HG3-08 | Hersteller : Vishay |
BAS16LTH-HG3-08 |
Produkt ist nicht verfügbar |
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| BAS16LTH-HG3-08 | Hersteller : Vishay |
SWITCHING DIODE GENPURP DFN1006-2A |
Produkt ist nicht verfügbar |
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BAS16LTH-HG3-08 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 100V 250MA DFN1006-2A Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: DFN1006-2A Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |