Technische Details BAS16LTH-HG3-08 Vishay
Description: DIODE STD 100V 250MA DFN10062A, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: DFN1006-2A, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote BAS16LTH-HG3-08 nach Preis ab 0.058 EUR bis 0.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BAS16LTH-HG3-08 | Vishay Semiconductors |
 Small Signal Switching Diodes SWITCHING DIODE GENPURP DFN1006-2A |
auf Bestellung 13680 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
BAS16LTH-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 100V 250MA DFN10062A Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: DFN1006-2A Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 19836 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BAS16LTH-HG3-08 |
|
Hersteller: Vishay Semiconductors
Small Signal Switching Diodes SWITCHING DIODE GENPURP DFN1006-2A
Small Signal Switching Diodes SWITCHING DIODE GENPURP DFN1006-2A
auf Bestellung 13680 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 0.32 EUR |
| 14+ | 0.21 EUR |
| 100+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.088 EUR |
| 5000+ | 0.077 EUR |
| 10000+ | 0.058 EUR |
| BAS16LTH-HG3-08 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 250MA DFN10062A
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE STD 100V 250MA DFN10062A
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.36pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 19836 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| 85+ | 0.21 EUR |
| 119+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.087 EUR |
| 2000+ | 0.086 EUR |
| 5000+ | 0.074 EUR |