BAS20-G3-18

BAS20-G3-18 Vishay General Semiconductor - Diodes Division


BAS19_20_21-G_Rev1.1_5-13-15.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 150V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
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Technische Details BAS20-G3-18 Vishay General Semiconductor - Diodes Division

Description: DIODE GP 150V 200MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: SOT-23-3, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 150 V.

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BAS20-G3-18 BAS20-G3-18 Hersteller : Vishay Semiconductors BAS19_20_21-G_Rev1.1_5-13-15.pdf Diodes - General Purpose, Power, Switching 200 Volt 200mA 50ns 2.5A IFSM
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