BAS21HMFHT116 Rohm Semiconductor

Description: DIODE GEN PURP 200V 200MA SSD3, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 100 nA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Not For New Designs, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: SSD3, Current - Average Rectified (Io): 200mA, Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).