auf Bestellung 8146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3247+ | 0.048 EUR |
3746+ | 0.04 EUR |
5406+ | 0.027 EUR |
5883+ | 0.024 EUR |
6494+ | 0.021 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BAS316,H3F Toshiba
Description: DIODE GEN PURP 100V 250MA USC, Packaging: Tape & Reel (TR), Package / Case: SC-76, SOD-323, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 ns, Technology: Standard, Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: USC, Operating Temperature - Junction: 150°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 200 nA @ 80 V.
Weitere Produktangebote BAS316,H3F nach Preis ab 0.019 EUR bis 0.39 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BAS316,H3F | Hersteller : Toshiba | Rectifier Diode Switching Si 100V 0.25A 3ns 2-Pin USC T/R |
auf Bestellung 8146 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS316,H3F | Hersteller : Toshiba | Diodes - General Purpose, Power, Switching Switching Diode 100V .35pF .25A |
auf Bestellung 19635 Stücke: Lieferzeit 14-28 Tag (e) |
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BAS316,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 100V 250MA USC Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Standard Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: USC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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BAS316,H3F | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 100V 250MA USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Technology: Standard Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: USC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 200 nA @ 80 V |
auf Bestellung 3167 Stücke: Lieferzeit 21-28 Tag (e) |
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BAS316,H3F | Hersteller : Toshiba | Rectifier Diode Switching Si 100V 0.25A 3ns 2-Pin USC T/R |
Produkt ist nicht verfügbar |
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BAS316,H3F | Hersteller : Toshiba | Rectifier Diode Switching Si 100V 0.25A 3ns 2-Pin USC T/R |
Produkt ist nicht verfügbar |