Produkte > INFINEON TECHNOLOGIES > BAS4002S02LRHE6327XTSA1

BAS4002S02LRHE6327XTSA1 Infineon Technologies


fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 200MA PGTSLP217
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PG-TSLP-2-17
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 12pF @ 5V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BAS4002S02LRHE6327XTSA1 Infineon Technologies

Description: DIODE SCHOTT 40V 200MA PGTSLP217, Current - Reverse Leakage @ Vr: 10 µA @ 40 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA, Voltage - DC Reverse (Vr) (Max): 40 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: PG-TSLP-2-17, Current - Average Rectified (Io): 200mA, Capacitance @ Vr, F: 12pF @ 5V, 1MHz, Technology: Schottky, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: SOD-882, Packaging: Tape & Reel (TR).