BAS40LTH-G3-08 Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTT 40V 200MA DFN10062A
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006-2A
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 9053 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
59+ | 0.30 EUR |
87+ | 0.20 EUR |
138+ | 0.13 EUR |
500+ | 0.10 EUR |
1000+ | 0.09 EUR |
2000+ | 0.09 EUR |
5000+ | 0.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BAS40LTH-G3-08 Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 40V 200MA DFN10062A, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Schottky, Capacitance @ Vr, F: 2.9pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: DFN1006-2A, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA, Current - Reverse Leakage @ Vr: 10 µA @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote BAS40LTH-G3-08 nach Preis ab 0.06 EUR bis 0.51 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
BAS40LTH-G3-08 | Hersteller : Vishay Semiconductors |
![]() |
auf Bestellung 27730 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BAS40LTH-G3-08 | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2.9pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DFN1006-2A Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |