BAT 54W H6327 Infineon Technologies
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details BAT 54W H6327 Infineon Technologies
Description: DIODE SCHOTT 30V 200MA SOT323-3, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 5 ns, Technology: Schottky, Capacitance @ Vr, F: 10pF @ 1V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: PG-SOT323-3, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA, Current - Reverse Leakage @ Vr: 2 µA @ 25 V.
Weitere Produktangebote BAT 54W H6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
BAT 54W H6327 | Hersteller : Infineon Technologies |
 Diode Schottky Si 0.2A Automotive 3-Pin SOT-323 T/R |
Produkt ist nicht verfügbar |
|
| BAT54WH6327 | Hersteller : Infineon Technologies |
Description: DIODE SCHOTT 30V 200MA SOT323-3 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 10pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: PG-SOT323-3 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
Produkt ist nicht verfügbar |