BAT54BR-G REG

BAT54BR-G REG Taiwan Semiconductor Corporation


BAT54T%20SERIES_H2111.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 30V 200MA SOT363
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOT-363
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 2 Pair Series Connection
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Technische Details BAT54BR-G REG Taiwan Semiconductor Corporation

Description: DIODE ARR SCHOT 30V 200MA SOT363, Current - Reverse Leakage @ Vr: 2 µA @ 25 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Voltage - DC Reverse (Vr) (Max): 30 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: SOT-363, Current - Average Rectified (Io) (per Diode): 200mA (DC), Diode Configuration: 2 Pair Series Connection, Technology: Schottky, Reverse Recovery Time (trr): 5 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).