BAV23QAZ Nexperia
auf Bestellung 69836 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7979+ | 0.07 EUR |
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Technische Details BAV23QAZ Nexperia
Description: DIODE ARRAY GP 250V DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 330mA, Supplier Device Package: DFN1010D-3, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 250 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 200 V, Qualification: AEC-Q101.
Weitere Produktangebote BAV23QAZ nach Preis ab 0.07 EUR bis 0.30 EUR
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BAV23QAZ | Hersteller : NEXPERIA |
 Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 190mA; 50ns; DFN1010D-3,SOT1215 Mounting: SMD Case: DFN1010D-3; SOT1215 Capacitance: 2pF Max. off-state voltage: 250V Max. forward voltage: 1.25V Load current: 190mA Semiconductor structure: common cathode Reverse recovery time: 50ns Max. forward impulse current: 9A Leakage current: 0.1mA Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: fast switching Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4892 Stücke: Lieferzeit 7-14 Tag (e) |
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BAV23QAZ | Hersteller : NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 190mA; 50ns; DFN1010D-3,SOT1215 Mounting: SMD Case: DFN1010D-3; SOT1215 Capacitance: 2pF Max. off-state voltage: 250V Max. forward voltage: 1.25V Load current: 190mA Semiconductor structure: common cathode Reverse recovery time: 50ns Max. forward impulse current: 9A Leakage current: 0.1mA Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: fast switching |
auf Bestellung 4892 Stücke: Lieferzeit 14-21 Tag (e) |
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BAV23QAZ | Hersteller : Nexperia USA Inc. |
Description: DIODE ARRAY GP 250V DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 330mA Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
auf Bestellung 4683 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV23QAZ | Hersteller : Nexperia |
Small Signal Switching Diodes Dual high-voltage switching diodes |
auf Bestellung 3501 Stücke: Lieferzeit 10-14 Tag (e) |
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BAV23QAZ | Hersteller : NEXPERIA |
Rectifier Diode Switching 250V 0.225A 50ns Automotive 3-Pin DFN-D EP |
Produkt ist nicht verfügbar |
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BAV23QAZ | Hersteller : Nexperia |
Diode Switching 250V 0.33A 3-Pin DFN-D EP Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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BAV23QAZ | Hersteller : Nexperia |
Diode Switching 250V 0.33A 3-Pin DFN-D EP Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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BAV23QAZ | Hersteller : Nexperia USA Inc. |
Description: DIODE ARRAY GP 250V DFN1010D-3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 330mA Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 250 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |