auf Bestellung 234000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5965+ | 0.091 EUR |
| 10000+ | 0.078 EUR |
| 100000+ | 0.063 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BAW56QAZ Nexperia
Description: DIODE ARR GP 90V 180MA DFN1010D3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 180mA (DC), Supplier Device Package: DFN1010D-3, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 90 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V, Qualification: AEC-Q101.
Weitere Produktangebote BAW56QAZ nach Preis ab 0.063 EUR bis 0.23 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BAW56QAZ | Hersteller : Nexperia |
Diode Switching 0.31A 3-Pin DFN-D EP T/R Automotive AEC-Q101 |
auf Bestellung 110000 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56QAZ | Hersteller : Nexperia |
Small Signal Switching Diodes The factory is currently not accepting orders for this product. |
auf Bestellung 221 Stücke: Lieferzeit 10-14 Tag (e) |
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BAW56QAZ | Hersteller : Nexperia USA Inc. |
Description: DIODE ARR GP 90V 180MA DFN1010D3Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 180mA (DC) Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1183 Stücke: Lieferzeit 10-14 Tag (e) |
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| BAW56QAZ | Hersteller : NXP Semiconductors |
Rectifier Diode Switching 0.31A 4ns Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 236145 Stücke: Lieferzeit 14-21 Tag (e) |
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BAW56QAZ | Hersteller : NEXPERIA |
Rectifier Diode Switching 90V 0.31A 4ns Automotive 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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BAW56QAZ | Hersteller : Nexperia |
Diode Switching 0.31A 3-Pin DFN-D EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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BAW56QAZ | Hersteller : Nexperia USA Inc. |
Description: DIODE ARR GP 90V 180MA DFN1010D3Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 180mA (DC) Supplier Device Package: DFN1010D-3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BAW56QAZ | Hersteller : NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 90V; 310mA; 4ns; DFN1010D-3; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 310mA Reverse recovery time: 4ns Semiconductor structure: common anode; double Case: DFN1010D-3 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 0.5µA Power dissipation: 0.54W Kind of package: reel; tape Application: automotive industry Max. load current: 0.5A Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |


