BAW78DE6327HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 400V 1A SOT89
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT89
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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Technische Details BAW78DE6327HTSA1 Infineon Technologies
Description: DIODE GEN PURP 400V 1A SOT89, Current - Reverse Leakage @ Vr: 1 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: PG-SOT89, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 10pF @ 0V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).