BC856BE-6327
Hersteller:
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details BC856BE-6327
Description: TRANS PNP 65V 0.1A PG-SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: PG-SOT23, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 330 mW.
Weitere Produktangebote BC856BE-6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| BC856BE6327 |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BC856BE6327 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BC856BE6327 - BC856 - GENERAL PURPOSE TRANSISTOR tariffCode: 85412100 euEccn: TBC hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 11960 Stücke: Lieferzeit 14-21 Tag (e) |
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BC 856B E6327 | Hersteller : Infineon Technologies |
Description: TRANS PNP 65V 0.1A PG-SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
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BC 856B E6327 | Hersteller : Infineon Technologies |
Description: TRANS PNP 65V 0.1A PG-SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
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BC856BE6327 | Hersteller : Infineon Technologies |
Description: BIPOLAR GEN PURPOSE TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23-3-1 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
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BC 856B E6327 | Hersteller : Infineon Technologies |
Bipolar Transistors - BJT PNP 65 V 100 mA |
Produkt ist nicht verfügbar |