BC109C TIN/LEAD Central Semiconductor
auf Bestellung 359 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.8 EUR |
| 10+ | 2.82 EUR |
| 100+ | 2.25 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.74 EUR |
| 2000+ | 1.48 EUR |
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Technische Details BC109C TIN/LEAD Central Semiconductor
Description: 25V 200MA 600MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 600 mW.
Weitere Produktangebote BC109C TIN/LEAD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BC109C TIN/LEAD | Hersteller : Central Semiconductor Corp |
Description: 25V 200MA 600MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 600 mW |
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