BC109C TIN/LEAD Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 25V 200MA 600MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 600 mW
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Technische Details BC109C TIN/LEAD Central Semiconductor Corp
Description: 25V 200MA 600MW TH TRANSISTOR-SM, Packaging: Box, Package / Case: TO-206AA, TO-18-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: TO-18, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 600 mW.
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|---|---|---|---|---|---|
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BC109C TIN/LEAD | Central Semiconductor | Bipolar Transistors - BJT NPN 30Vcbo 25Vceo 5.0Vebo 200mA 600mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BC109C TIN/LEAD |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 30Vcbo 25Vceo 5.0Vebo 200mA 600mW
Bipolar Transistors - BJT NPN 30Vcbo 25Vceo 5.0Vebo 200mA 600mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH