Technische Details BC55-10PAS-QX Nexperia
Description: POWER BJTS IN DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Frequency - Transition: 180MHz, Supplier Device Package: DFN2020D-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 420 mW, Qualification: AEC-Q101.
Weitere Produktangebote BC55-10PAS-QX nach Preis ab 0.21 EUR bis 0.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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BC55-10PAS-QX | Nexperia USA Inc. |
Description: POWER BJTS IN DFNPackaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 420 mW Qualification: AEC-Q101 |
auf Bestellung 2995 Stücke: Lieferzeit 10-14 Tag (e) |
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| BC55-10PAS-QX |
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Hersteller: Nexperia USA Inc.
Description: POWER BJTS IN DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
Description: POWER BJTS IN DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 420 mW
Qualification: AEC-Q101
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 35+ | 0.61 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.21 EUR |



