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BC817-25QB-QZ

BC817-25QB-QZ Nexperia

BC817QB-Q_SER.pdf
Hersteller: Nexperia
Bipolar Transistors - BJT SOT8015 45V .5A NPN GP TRANS
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.51 EUR
10+0.3 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2500+0.1 EUR
5000+0.084 EUR
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Technische Details BC817-25QB-QZ Nexperia

Description: TRANS NPN 45V 0.5A DFN1110D-3, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Power - Max: 350 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: DFN1110D-3, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Wettable Flank.

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BC817-25QB-QZ BC817-25QB-QZ Hersteller : Nexperia USA Inc. BC817QB-Q_SER.pdf Description: TRANS NPN 45V 0.5A DFN1110D-3
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: DFN1110D-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount, Wettable Flank
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Im Einkaufswagen  Stück im Wert von  UAH