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BC817-40QB-QZ

BC817-40QB-QZ Nexperia

BC817QB_Q_SER-2498208.pdf Hersteller: Nexperia
Bipolar Transistors - BJT BC817-40QB-Q/SOT8015/DFN1110D-
auf Bestellung 4680 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
77+0.68 EUR
115+ 0.46 EUR
181+ 0.29 EUR
1000+ 0.13 EUR
5000+ 0.11 EUR
10000+ 0.086 EUR
25000+ 0.083 EUR
Mindestbestellmenge: 77
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Technische Details BC817-40QB-QZ Nexperia

Description: SMALL SIGNAL BIPOLAR IN DFN PACK, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1110D-3, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 350 mW, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BC817-40QB-QZ nach Preis ab 0.076 EUR bis 0.44 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BC817-40QB-QZ Hersteller : Nexperia USA Inc. BC817QB-Q_SER.pdf Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
40+0.44 EUR
57+ 0.31 EUR
117+ 0.15 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.076 EUR
Mindestbestellmenge: 40
BC817-40QB-QZ Hersteller : Nexperia USA Inc. BC817QB-Q_SER.pdf Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q101
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