BC817K-25WE6327 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
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Technische Details BC817K-25WE6327 Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Frequency - Transition: 170MHz, Supplier Device Package: PG-SOT323-3-1, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 500 mW.
Weitere Produktangebote BC817K-25WE6327
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BC 817K-25W E6327 | Hersteller : Infineon Technologies |
Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A |
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