BC817RA147 NXP Semiconductors
Hersteller: NXP SemiconductorsDescription: BC817RA - SMALL SIGNAL BIPOLAR T
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN
Operating Temperature: 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7036+ | 0.096 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BC817RA147 NXP Semiconductors
Description: BC817RA - SMALL SIGNAL BIPOLAR T, Packaging: Bulk, Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN, Operating Temperature: 150°C (TJ), Power - Max: 500mW, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 45V, Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1412-6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote BC817RA147
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BC817RA147 | Hersteller : NXP |
Description: NXP - BC817RA147 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |