BC817RA147 NXP Semiconductors

Description: BC817RA - SMALL SIGNAL BIPOLAR T, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 45V, Current - Collector (Ic) (Max): 500mA, Power - Max: 500mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 NPN, Mounting Type: Surface Mount, Package / Case: 6-XFDFN Exposed Pad, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: DFN1412-6, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Part Status: Active, Packaging: Bulk.