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BC847BLP4Q-7B Diodes Incorporated


Hersteller: Diodes Incorporated
Description: TRANS NPN 45V 0.1A UDFN10063/SWP
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: U-DFN1006-3/SWP (Type UX)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 255 mW
Qualification: AEC-Q101
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Technische Details BC847BLP4Q-7B Diodes Incorporated

Description: TRANS NPN 45V 0.1A UDFN10063/SWP, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: U-DFN1006-3/SWP (Type UX), Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 255 mW, Qualification: AEC-Q101.

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BC847BLP4Q-7B Hersteller : Diodes Incorporated Bipolar Transistors - BJT General Purpose Transistor U-DFN1006-3 T&R 10K
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