Produktrezensionen
Produktbewertung abgeben
Technische Details BC847BQBZ Nexperia
Description: TRANS NPN 45V 0.1A DFN1110D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1110D-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 340 mW, Qualification: AEC-Q101.
Weitere Produktangebote BC847BQBZ nach Preis ab 0.065 EUR bis 0.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BC847BQBZ | Nexperia |
 Trans GP BJT NPN 45V 0.1A 420mW 3-Pin DFN-D EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
BC847BQBZ | Nexperia |
Trans GP BJT NPN 45V 0.1A 420mW 3-Pin DFN-D EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
BC847BQBZ | Nexperia |
Bipolar Transistors - BJT 45 V, 100 mA NPN general-purpose transistor |
auf Bestellung 10052 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
BC847BQBZ | Nexperia USA Inc. |
Description: TRANS NPN 45V 0.1A DFN1110D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1110D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW Qualification: AEC-Q101 |
auf Bestellung 4162 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| BC847BQBZ | NEXPERIA |
Description: NEXPERIA - BC847BQBZ - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 18992 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BC847BQBZ |
|
Hersteller: Nexperia
Trans GP BJT NPN 45V 0.1A 420mW 3-Pin DFN-D EP T/R
Trans GP BJT NPN 45V 0.1A 420mW 3-Pin DFN-D EP T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.36 EUR |
| 10000+ | 0.35 EUR |
| BC847BQBZ |
|
Hersteller: Nexperia
Trans GP BJT NPN 45V 0.1A 420mW 3-Pin DFN-D EP T/R
Trans GP BJT NPN 45V 0.1A 420mW 3-Pin DFN-D EP T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.36 EUR |
| BC847BQBZ |
|
Hersteller: Nexperia
Bipolar Transistors - BJT 45 V, 100 mA NPN general-purpose transistor
Bipolar Transistors - BJT 45 V, 100 mA NPN general-purpose transistor
auf Bestellung 10052 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 0.39 EUR |
| 15+ | 0.24 EUR |
| 100+ | 0.14 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.086 EUR |
| 2500+ | 0.075 EUR |
| 5000+ | 0.065 EUR |
| BC847BQBZ |
|
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.1A DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Qualification: AEC-Q101
Description: TRANS NPN 45V 0.1A DFN1110D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1110D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
Qualification: AEC-Q101
auf Bestellung 4162 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 0.46 EUR |
| 74+ | 0.29 EUR |
| 103+ | 0.2 EUR |
| 119+ | 0.18 EUR |
| BC847BQBZ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - BC847BQBZ - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
Description: NEXPERIA - BC847BQBZ - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 18992 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 370+ | 0.68 EUR |
| 614+ | 0.38 EUR |
| 981+ | 0.21 EUR |
| 1332+ | 0.17 EUR |
| 1719+ | 0.12 EUR |
| 5000+ | 0.1 EUR |