BC848AE6327 Infineon Technologies
Hersteller: Infineon Technologies
Транзистор NPN, Uceo, В = 30, Ic = 100 мА, ft, МГц = 250, hFE = 110 @ 2 мA, 5 В, Icutoff-max = 15 нА, Uceo(sat), В @ Ic, Ib = 0,6 @ 5 мA, 100 мА, Р, Вт = 0,33 Вт, Тексп, °C = -65...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: SOT-23-3 Од. в
Anzahl je Verpackung: 3000 Stücke
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Technische Details BC848AE6327 Infineon Technologies
Description: TRANS NPN 30V 0.1A SOT23, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: PG-SOT23, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 330 mW.
Weitere Produktangebote BC848AE6327
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BC848AE6327 | Hersteller : Infineon Technologies |
Description: TRANS NPN 30V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
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BC 848A E6327 | Hersteller : Infineon Technologies |
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR |
Produkt ist nicht verfügbar |