BC857AMB,315 Nexperia
auf Bestellung 46625264 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 14635+ | 0.04 EUR |
| 100000+ | 0.03 EUR |
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Technische Details BC857AMB,315 Nexperia
Description: TRANS PNP 45V 0.1A DFN1006B-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1006B-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 250 mW.
Weitere Produktangebote BC857AMB,315 nach Preis ab 0.06 EUR bis 0.40 EUR
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BC857AMB,315 | Hersteller : Nexperia |
 Bipolar Transistors - BJT 45 V, 100 mA PNP general-purpose transistor |
auf Bestellung 9780 Stücke: Lieferzeit 10-14 Tag (e) |
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| BC857AMB,315 | Hersteller : NEXPERIA |
Description: NEXPERIA - BC857AMB,315 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 46613434 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857AMB,315 | Hersteller : NEXPERIA |
Trans GP BJT PNP 45V 0.1A 250mW Automotive 3-Pin DFN-B T/R |
Produkt ist nicht verfügbar |
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| BC857AMB,315 | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; DFN1006B-3,SOT883B Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: DFN1006B-3; SOT883B Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BC857AMB,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A DFN1006B-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1006B-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
Produkt ist nicht verfügbar |
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| BC857AMB,315 | Hersteller : NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; DFN1006B-3,SOT883B Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: DFN1006B-3; SOT883B Current gain: 125...250 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |