| Anzahl | Preis |
|---|---|
| 6212+ | 0.088 EUR |
| 10000+ | 0.078 EUR |
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Technische Details BC857AQBAZ Nexperia
Description: TRANS 45V 0.1A DFN1110D-3, Qualification: AEC-Q101, Grade: Automotive, Power - Max: 340 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: DFN1110D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-XDFN Exposed Pad, Packaging: Cut Tape (CT).
Weitere Produktangebote BC857AQBAZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BC857AQBAZ | Hersteller : Nexperia USA Inc. |
 Description: TRANS 45V 0.1A DFN1110D-3Qualification: AEC-Q101 Grade: Automotive Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: DFN1110D-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Cut Tape (CT) |
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BC857AQBAZ | Hersteller : Nexperia |
Bipolar Transistors - BJT SOT8015 45V .1A PNP BJT |
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