BC857BQB-QZ Nexperia
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6579+ | 0.083 EUR |
| 10000+ | 0.072 EUR |
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Technische Details BC857BQB-QZ Nexperia
Description: SMALL SIGNAL BIPOLAR IN DFN PACK, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1110D-3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 340 mW, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BC857BQB-QZ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BC857BQB-QZ | Hersteller : Nexperia USA Inc. |
 Description: SMALL SIGNAL BIPOLAR IN DFN PACKPackaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1110D-3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 340 mW Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BC857BQB-QZ | Hersteller : Nexperia |
Bipolar Transistors - BJT BC857BQB-Q/SOT8015/DFN1110D-3 |
Produkt ist nicht verfügbar |