BC857CQAZ Nexperia
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 6508+ | 0.084 EUR |
| 10000+ | 0.072 EUR |
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Technische Details BC857CQAZ Nexperia
Description: TRANS PNP 45V 0.1A DFN1010D-3, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1010D-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 280 mW, Qualification: AEC-Q101.
Weitere Produktangebote BC857CQAZ nach Preis ab 0.058 EUR bis 0.36 EUR
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BC857CQAZ | Hersteller : Nexperia |
 Trans GP BJT PNP 45V 0.1A 440mW 3-Pin DFN-D EP T/R Automotive AEC-Q101 |
auf Bestellung 19251 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857CQAZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A DFN1010D-3 Packaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 280 mW Qualification: AEC-Q101 |
auf Bestellung 109251 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857CQAZ | Hersteller : Nexperia |
Bipolar Transistors - BJT SOT1215 45V .1A PNP GP TRANS |
auf Bestellung 328 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857CQAZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A DFN1010D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 280 mW Qualification: AEC-Q101 |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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| BC857CQAZ | Hersteller : NXP Semiconductors |
Trans GP BJT PNP 45V 0.1A 440mW Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 175000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BC857CQAZ | Hersteller : NEXPERIA |
Description: NEXPERIA - BC857CQAZ - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857CQAZ | Hersteller : NEXPERIA |
Trans GP BJT PNP 45V 0.1A 440mW Automotive 3-Pin DFN-D EP T/R |
Produkt ist nicht verfügbar |
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BC857CQAZ | Hersteller : Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A DFN1010D-3 Packaging: Tape & Reel (TR) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1010D-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 280 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |