BC857CQAZ Nexperia
| Anzahl | Privatkunde |
|---|---|
| 5837+ | 0.11 EUR |
| 10000+ | 0.098 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BC857CQAZ Nexperia
Description: TRANS PNP 45V 0.1A DFN1010D-3, Packaging: Bulk, Package / Case: 3-XDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: DFN1010D-3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 280 mW, Qualification: AEC-Q101.
Weitere Produktangebote BC857CQAZ nach Preis ab 0.075 EUR bis 0.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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BC857CQAZ | Nexperia |
 Trans GP BJT PNP 45V 0.1A 440mW 3-Pin DFN-D EP T/R Automotive AEC-Q101 |
auf Bestellung 19251 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857CQAZ | Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A DFN1010D-3 Packaging: Bulk Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: DFN1010D-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 280 mW Qualification: AEC-Q101 |
auf Bestellung 91903 Stücke: Lieferzeit 10-14 Tag (e) |
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BC857CQAZ | Nexperia |
Bipolar Transistors - BJT BC857CQA/SOT1215/DFN1010D-3 |
auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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| BC857CQAZ | NEXPERIA |
Description: NEXPERIA - BC857CQAZ - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BC857CQAZ | NXP Semiconductors |
Trans GP BJT PNP 45V 0.1A 440mW Automotive 3-Pin DFN-D EP T/R |
auf Bestellung 172200 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BC857CQAZ |
|
Hersteller: Nexperia
Trans GP BJT PNP 45V 0.1A 440mW 3-Pin DFN-D EP T/R Automotive AEC-Q101
Trans GP BJT PNP 45V 0.1A 440mW 3-Pin DFN-D EP T/R Automotive AEC-Q101
auf Bestellung 19251 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5837+ | 0.11 EUR |
| 10000+ | 0.098 EUR |
| BC857CQAZ |
|
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A DFN1010D-3
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 280 mW
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.1A DFN1010D-3
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 280 mW
Qualification: AEC-Q101
auf Bestellung 91903 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3877+ | 0.14 EUR |
| BC857CQAZ |
|
Hersteller: Nexperia
Bipolar Transistors - BJT BC857CQA/SOT1215/DFN1010D-3
Bipolar Transistors - BJT BC857CQA/SOT1215/DFN1010D-3
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.49 EUR |
| 12+ | 0.3 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 2500+ | 0.12 EUR |
| 5000+ | 0.075 EUR |
| BC857CQAZ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - BC857CQAZ - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
Description: NEXPERIA - BC857CQAZ - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15000+ | 0.077 EUR |
| BC857CQAZ |
|
Hersteller: NXP Semiconductors
Trans GP BJT PNP 45V 0.1A 440mW Automotive 3-Pin DFN-D EP T/R
Trans GP BJT PNP 45V 0.1A 440mW Automotive 3-Pin DFN-D EP T/R
auf Bestellung 172200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5837+ | 0.11 EUR |
| 10000+ | 0.098 EUR |
| 100000+ | 0.08 EUR |