BC857CQB-QZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A DFN1110D-3
Grade: Automotive
Qualification: AEC-Q101
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1110D-3
Frequency - Transition: 100MHz
Packaging: Tape & Reel (TR)
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Technische Details BC857CQB-QZ Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A DFN1110D-3, Grade: Automotive, Qualification: AEC-Q101, Power - Max: 340 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 100 mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-XDFN Exposed Pad, Supplier Device Package: DFN1110D-3, Frequency - Transition: 100MHz, Packaging: Tape & Reel (TR).
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BC857CQB-QZ | Hersteller : Nexperia |
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