BC858BT116 Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 323+ | 0.55 EUR |
| 577+ | 0.3 EUR |
| 860+ | 0.2 EUR |
| 1146+ | 0.14 EUR |
| 3000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BC858BT116 Rohm Semiconductor
Description: TRANS PNP 30V 0.1A SST3, Power - Max: 350 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Not For New Designs, Supplier Device Package: SST3, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote BC858BT116
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BC858BT116 | Rohm Semiconductor |
 Description: TRANS PNP 30V 0.1A SST3Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: SST3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
BC858BT116 | Rohm Semiconductor |
Description: TRANS PNP 30V 0.1A SST3 Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: SST3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BC858BT116 | ROHM Semiconductor |
Bipolar Transistors - BJT PNP 30V 1MA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BC858BT116 |
|
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 0.1A SST3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: SST3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 30V 0.1A SST3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: SST3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC858BT116 |
|
Hersteller: Rohm Semiconductor
Description: TRANS PNP 30V 0.1A SST3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: SST3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 30V 0.1A SST3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Not For New Designs
Supplier Device Package: SST3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC858BT116 |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT PNP 30V 1MA
Bipolar Transistors - BJT PNP 30V 1MA
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH