BC858BT116

BC858BT116 Rohm Semiconductor


bc858bt116-e.pdf Hersteller: Rohm Semiconductor
Trans GP BJT PNP 30V 0.1A 350mW 3-Pin SOT-23 T/R
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Lieferzeit 14-21 Tag (e)
Anzahl Preis
1690+0.09 EUR
Mindestbestellmenge: 1690
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Technische Details BC858BT116 Rohm Semiconductor

Description: TRANS PNP 30V 0.1A SST3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: SST3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 350 mW.

Weitere Produktangebote BC858BT116

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BC858BT116 BC858BT116 Hersteller : Rohm Semiconductor datasheet?p=BC858B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 0.1A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SST3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC858BT116 BC858BT116 Hersteller : Rohm Semiconductor datasheet?p=BC858B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PNP 30V 0.1A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SST3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC858BT116 BC858BT116 Hersteller : ROHM Semiconductor datasheet?p=BC858B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Bipolar Transistors - BJT PNP 30V 1MA
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