BC879,112

BC879,112 NXP Semiconductors


bc875_879_5.pdf Hersteller: NXP Semiconductors
Trans Darlington NPN 80V 1A 830mW 3-Pin SPT Bulk
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Technische Details BC879,112 NXP Semiconductors

Description: TRANS NPN DARL 80V 1A TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 830 mW.

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BC879,112 BC879,112 Hersteller : NXP USA Inc. BC875,BC879.pdf Description: TRANS NPN DARL 80V 1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 830 mW
Produkt ist nicht verfügbar