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BCP49H6419

BCP49H6419 Infineon Technologies

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Hersteller: Infineon Technologies
Description: BIPOLAR DARLINGTON TRANSISTOR
Packaging: Bulk
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2308+0.22 EUR
Mindestbestellmenge: 2308 Stücke
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Technische Details BCP49H6419 Infineon Technologies

Description: BIPOLAR DARLINGTON TRANSISTOR, Packaging: Bulk, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: PG-SOT223-4, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA.