BCP5216H6327XTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans GP BJT PNP 60V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 84000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7000+ | 0.29 EUR |
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Technische Details BCP5216H6327XTSA1 Infineon Technologies
Description: TRANS PNP 60V 1A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Frequency - Transition: 125MHz, Supplier Device Package: PG-SOT223-4-10, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 2 W.
Weitere Produktangebote BCP5216H6327XTSA1 nach Preis ab 0.41 EUR bis 0.41 EUR
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BCP5216H6327XTSA1 | Hersteller : Infineon Technologies |
Description: TRANS PNP 60V 1A SOT223-4 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT223-4-10 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
auf Bestellung 136000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCP5216H6327XTSA1 | Hersteller : Infineon Technologies |
Trans GP BJT PNP 60V 1A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BCP5216H6327XTSA1 | Hersteller : Infineon Technologies |
Trans GP BJT PNP 60V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BCP5216H6327XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Mounting: SMD Frequency: 125MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BCP5216H6327XTSA1 | Hersteller : Infineon Technologies |
Description: TRANS PNP 60V 1A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 125MHz Supplier Device Package: PG-SOT223-4-10 Part Status: Last Time Buy Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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BCP5216H6327XTSA1 | Hersteller : Infineon Technologies |
Bipolar Transistors - BJT AF TRANSISTORS |
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BCP5216H6327XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Mounting: SMD Frequency: 125MHz |
Produkt ist nicht verfügbar |