BCP5310TA Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
| 3000+ | 0.15 EUR |
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Technische Details BCP5310TA Diodes Incorporated
Description: TRANS PNP 80V 1A SOT-223-3, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: SOT-223-3, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2 W.
Weitere Produktangebote BCP5310TA nach Preis ab 0.18 EUR bis 2.43 EUR
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BCP5310TA | Diodes Incorporated |
Description: TRANS PNP 80V 1A SOT-223-3Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCP5310TA | Diodes Incorporated |
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K |
auf Bestellung 83 Stücke: Lieferzeit 10-14 Tag (e) |
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BCP5310TA | DIODES INCORPORATED |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Manufacturer standard package: 1000pcs. |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCP5310TA | Diodes INC. |
Транзистор PNP, Ptot, Вт = 2, Uceo, В = 80, Тип монт. = smd, hFE = 63 @ 150 мA, 2 В, Icutoff-max = 100 нА, Uceo(sat), В @ Ic, Ib = 0,5 @ 50 мA, 500 мА, Тексп, °С = -65...+150,... Транзистори Корпус: SOT-223 Од. вим: штAnzahl je Verpackung: 1000 Stücke |
verfügbar 6 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| BCP5310TA |
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Hersteller: Diodes Incorporated
Description: TRANS PNP 80V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS PNP 80V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-223-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 47+ | 0.45 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| BCP5310TA |
![]() |
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K
auf Bestellung 83 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.87 EUR |
| 10+ | 0.52 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.18 EUR |
| BCP5310TA |
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Hersteller: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Manufacturer standard package: 1000pcs.
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 2.43 EUR |
| BCP5310TA |
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Hersteller: Diodes INC.
Транзистор PNP, Ptot, Вт = 2, Uceo, В = 80, Тип монт. = smd, hFE = 63 @ 150 мA, 2 В, Icutoff-max = 100 нА, Uceo(sat), В @ Ic, Ib = 0,5 @ 50 мA, 500 мА, Тексп, °С = -65...+150,... Транзистори Корпус: SOT-223 Од. вим: шт
Anzahl je Verpackung: 1000 Stücke
Транзистор PNP, Ptot, Вт = 2, Uceo, В = 80, Тип монт. = smd, hFE = 63 @ 150 мA, 2 В, Icutoff-max = 100 нА, Uceo(sat), В @ Ic, Ib = 0,5 @ 50 мA, 500 мА, Тексп, °С = -65...+150,... Транзистори Корпус: SOT-223 Од. вим: шт
Anzahl je Verpackung: 1000 Stücke
verfügbar 6 Stücke:

