BCP5510TA DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 387 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 358+ | 0.20 EUR |
| 387+ | 0.19 EUR |
| 709+ | 0.10 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BCP5510TA DIODES INCORPORATED
Description: TRANS NPN 60V 1A SOT-223-3, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Frequency - Transition: 150MHz, Supplier Device Package: SOT-223-3, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 2 W.
Weitere Produktangebote BCP5510TA nach Preis ab 0.12 EUR bis 0.69 EUR
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BCP5510TA | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Current gain: 63...160 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
auf Bestellung 387 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP5510TA | Hersteller : Diodes Incorporated |
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K |
auf Bestellung 1718 Stücke: Lieferzeit 10-14 Tag (e) |
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BCP5510TA | Hersteller : Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT-223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
auf Bestellung 810 Stücke: Lieferzeit 10-14 Tag (e) |
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BCP5510TA | Hersteller : Diodes Inc |
Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BCP5510TA | Hersteller : Diodes Zetex |
Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BCP5510TA | Hersteller : Diodes Zetex |
Trans GP BJT NPN 60V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BCP5510TA | Hersteller : Diodes Incorporated |
Description: TRANS NPN 60V 1A SOT-223-3 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 150MHz Supplier Device Package: SOT-223-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
Produkt ist nicht verfügbar |