 
BCP5516H6327XTSA1 Infineon Technologies
 Hersteller: Infineon Technologies
                                                Hersteller: Infineon TechnologiesTrans GP BJT NPN 60V 1A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R
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Technische Details BCP5516H6327XTSA1 Infineon Technologies
Description: TRANS NPN 60V 1A PG-SOT223-4-10, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: PG-SOT223-4-10, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 2 W. 
Weitere Produktangebote BCP5516H6327XTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | 
|---|---|---|---|---|---|
|   | BCP5516H6327XTSA1 | Hersteller : Infineon Technologies |  Trans GP BJT NPN 60V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |
|   | BCP5516H6327XTSA1 | Hersteller : Infineon Technologies |  Description: TRANS NPN 60V 1A PG-SOT223-4-10 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4-10 Part Status: Last Time Buy Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W | Produkt ist nicht verfügbar | |
|   | BCP5516H6327XTSA1 | Hersteller : Infineon Technologies |  Bipolar Transistors - BJT Y | Produkt ist nicht verfügbar |