BCP 55 E6327 Infineon Technologies
Hersteller: Infineon Technologies
Транзистор NPN, Ptot, Вт = 2, Uceo, В = 60, Ic = 1 А, Тип монт. = smd, ft, МГц = 100, hFE = 40 @ 15 мA, 2 В, Uceo(sat), В @ Ic, Ib = 0,5 @ 50 мA, 500 мА, Тексп, °С = -65..+150,... Група товару: Транзистори Корпус: SOT-223-4 Од. вим: шт
Anzahl je Verpackung: 1000 Stücke
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Technische Details BCP 55 E6327 Infineon Technologies
Description: TRANS NPN 60V 1A SOT223-4, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: PG-SOT223-4-21, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 2 W.
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BCP55E6327 | Hersteller : Infineon Technologies |
Description: TRANS NPN 60V 1A SOT223-4 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4-21 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
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