BCP5616H6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans GP BJT NPN 80V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
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Technische Details BCP5616H6327XTSA1 Infineon Technologies
Description: TRANS NPN 80V 1A PG-SOT223-4-10, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: PG-SOT223-4-10, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2 W.
Weitere Produktangebote BCP5616H6327XTSA1 nach Preis ab 0.14 EUR bis 8.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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BCP5616H6327XTSA1 | Infineon Technologies |
Trans GP BJT NPN 80V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 2022 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP5616H6327XTSA1 | Infineon Technologies |
Description: TRANS NPN 80V 1A PG-SOT223-4-10Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4-10 Part Status: Last Time Buy Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCP5616H6327XTSA1 | Infineon Technologies |
Bipolar Transistors - BJT AF TRANSISTORS |
auf Bestellung 236 Stücke: Lieferzeit 10-14 Tag (e) |
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BCP5616H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT223 Mounting: SMD Frequency: 100MHz |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCP5616H6327XTSA1 | ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BCP5616H6327XTSA1 - BCP56 - GENERAL PURPOSE TRANSISTORtariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCP5616H6327XTSA1 |
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Hersteller: Infineon Technologies
Trans GP BJT NPN 80V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
Trans GP BJT NPN 80V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 2022 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 570+ | 0.31 EUR |
| 1050+ | 0.15 EUR |
| 1167+ | 0.14 EUR |
| BCP5616H6327XTSA1 |
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Hersteller: Infineon Technologies
Description: TRANS NPN 80V 1A PG-SOT223-4-10
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS NPN 80V 1A PG-SOT223-4-10
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.36 EUR |
| 2000+ | 0.32 EUR |
| 3000+ | 0.3 EUR |
| 5000+ | 0.29 EUR |
| BCP5616H6327XTSA1 |
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Hersteller: Infineon Technologies
Bipolar Transistors - BJT AF TRANSISTORS
Bipolar Transistors - BJT AF TRANSISTORS
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.34 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.25 EUR |
| BCP5616H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 8.51 EUR |
| BCP5616H6327XTSA1 |
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Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BCP5616H6327XTSA1 - BCP56 - GENERAL PURPOSE TRANSISTOR
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - BCP5616H6327XTSA1 - BCP56 - GENERAL PURPOSE TRANSISTOR
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1180+ | 0.62 EUR |




