auf Bestellung 3000 Stücke:
Lieferzeit 164-168 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.92 EUR |
| 10+ | 0.63 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.27 EUR |
| 9000+ | 0.25 EUR |
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Technische Details BCP5616MTWG onsemi
Description: TRANS NPN 80V 1A 3WDFNW, Packaging: Bulk, Package / Case: 3-WDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Frequency - Transition: 140MHz, Supplier Device Package: 3-WDFNW (2x2), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.5 W.
Weitere Produktangebote BCP5616MTWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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BCP5616MTWG | Hersteller : ON Semiconductor |
 General Purpose Transistor Medium Power, NPN |
Produkt ist nicht verfügbar |
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BCP5616MTWG | Hersteller : ON Semiconductor |
General Purpose Transistor Medium Power, NPN |
Produkt ist nicht verfügbar |
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BCP5616MTWG | Hersteller : onsemi |
Description: TRANS NPN 80V 1A 3WDFNW Packaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 140MHz Supplier Device Package: 3-WDFNW (2x2) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |