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BCR108SH6327

BCR108SH6327 INFINEON TECHNOLOGIES

pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150 Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 170MHz
Type of transistor: NPN x2
Polarisation: bipolar
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2618 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
562+0.13 EUR
642+0.11 EUR
747+0.096 EUR
782+0.092 EUR
3000+0.087 EUR
Mindestbestellmenge: 562
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BCR108SH6327 INFINEON TECHNOLOGIES

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Frequency - Transition: 170MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: PG-SOT363-6-1, Part Status: Active.

Weitere Produktangebote BCR108SH6327 nach Preis ab 0.092 EUR bis 0.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BCR108SH6327 BCR108SH6327 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5B049F6A4C469&compId=BCR108WH6327.pdf?ci_sign=58732ba021c9565fcb414c0386fdb19d5190b150 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Mounting: SMD
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Frequency: 170MHz
Type of transistor: NPN x2
Polarisation: bipolar
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
auf Bestellung 2618 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
562+0.13 EUR
642+0.11 EUR
747+0.096 EUR
782+0.092 EUR
Mindestbestellmenge: 562
Im Einkaufswagen  Stück im Wert von  UAH
BCR 108S H6327 BCR 108S H6327 Hersteller : Infineon Technologies Infineon_BCR108SERIES_DS_v01_01_en.pdf Digital Transistors AF DIGITAL TRANSISTOR
auf Bestellung 28227 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.56 EUR
10+0.48 EUR
100+0.27 EUR
500+0.18 EUR
1000+0.14 EUR
3000+0.12 EUR
6000+0.1 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
BCR108SH6327 BCR108SH6327 Hersteller : Infineon Technologies Infineon-BCR108SERIES-DS-v01_01-en[1].pdf?fileId=db3a30431428a37301144054398602e5 Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 170MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
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Im Einkaufswagen  Stück im Wert von  UAH