BCR 108S H6327 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.8 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.24 EUR |
| 6000+ | 0.2 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3 Stücke
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Technische Details BCR 108S H6327 Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Frequency - Transition: 170MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: PG-SOT363-6-1, Part Status: Active.
Weitere Produktangebote BCR 108S H6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BCR108SH6327 | INFINEON TECHNOLOGIES |
 Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Base-emitter resistor: 47kΩ Case: SOT363 Frequency: 170MHz Collector current: 0.1A Mounting: SMD |
auf Bestellung 1101 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BCR108SH6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 170MHz
Collector current: 0.1A
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 170MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 1101 Stücke:
Lieferzeit 14-21 Tag (e)