BCR141SH6327 Infineon
Hersteller: Infineon
2NPN 50V 100mA 130MHz 250mW BCR141SH6327XTSA1 BCR141SH6327 Infineon TBCR141s
Anzahl je Verpackung: 500 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 0.089 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BCR141SH6327 Infineon
Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V, Frequency - Transition: 130MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: PG-SOT363-6-1, Part Status: Active.
Weitere Produktangebote BCR141SH6327 nach Preis ab 0.13 EUR bis 0.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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|---|---|---|---|---|---|---|---|
| BCR 141S H6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 250mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Bulk Part Status: Active Supplier Device Package: PG-SOT363-6 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| BCR 141S H6327 | Infineon Technologies |
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR |
auf Bestellung 1610 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BCR 141S H6327 |
|
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT363-6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Description: BIPOLAR DIGITAL TRANSISTOR
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT363-6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3796+ | 0.13 EUR |
| BCR 141S H6327 |
|
Hersteller: Infineon Technologies
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
auf Bestellung 1610 Stücke:
Lieferzeit 10-14 Tag (e)