BCR 142 E6327 Infineon Technologies
auf Bestellung 16578 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.42 EUR |
| 10+ | 0.29 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.09 EUR |
| 3000+ | 0.079 EUR |
| 6000+ | 0.067 EUR |
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Technische Details BCR 142 E6327 Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Supplier Device Package: PG-SOT23-3-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote BCR 142 E6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BCR142 E6327 | Hersteller : INFINEON | SOT23-WZ PB-FREE |
auf Bestellung 186000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR142E6327 | Hersteller : Infineon Technologies |
 Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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