Produkte > INFINEON > BCR169F E6327

BCR169F E6327 INFINEON


Hersteller: INFINEON
SOT523-WS PB-FRE
auf Bestellung 87000 Stücke:

Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details BCR169F E6327 INFINEON

Description: TRANS PREBIAS PNP 50V TSFP-3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Supplier Device Package: PG-TSFP-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 4.7 kOhms.

Weitere Produktangebote BCR169F E6327

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BCR 169F E6327 BCR 169F E6327 Hersteller : Infineon Technologies bcr169series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440313bb302d1 Description: TRANS PREBIAS PNP 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar