BCR 108W H6327 Infineon Technologies
auf Bestellung 32684 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.48 EUR |
| 10+ | 0.33 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.1 EUR |
| 3000+ | 0.09 EUR |
| 6000+ | 0.076 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BCR 108W H6327 Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323-3, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Supplier Device Package: PG-SOT323-3-1, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 170 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote BCR 108W H6327 nach Preis ab 0.058 EUR bis 0.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BCR108WH6327 | Hersteller : INFINEON TECHNOLOGIES |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 170MHz Kind of transistor: BRT Anzahl je Verpackung: 5 Stücke |
auf Bestellung 130 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||
|
|
BCR108WH6327 | Hersteller : INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 170MHz Kind of transistor: BRT |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
BCR108WH6327 | Hersteller : Infineon Technologies |
Description: TRANS PREBIAS NPN 50V SOT323-3 Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |