Produkte > INFINEON > BCR116SE6327

BCR116SE6327 INFINEON


INFNS16384-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON
07+
auf Bestellung 15010 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BCR116SE6327 INFINEON

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 250mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Bulk, Part Status: Active, Supplier Device Package: PG-SOT363-6-1, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 4.7kOhms.

Weitere Produktangebote BCR116SE6327

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BCR116SE6327 BCR116SE6327 Infineon Technologies INFNS16384-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR116SE6327 INFNS16384-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH