BCR 119S H6327 Infineon Technologies
auf Bestellung 2487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.55 EUR |
| 100+ | 0.34 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.16 EUR |
| 9000+ | 0.14 EUR |
| 24000+ | 0.13 EUR |
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Technische Details BCR 119S H6327 Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Frequency - Transition: 150MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: PG-SOT363-6-1, Part Status: Active.
Weitere Produktangebote BCR 119S H6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BCR119SH6327 | Hersteller : Infineon Technologies |
 Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: PG-SOT363-6-1 Part Status: Active |
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