BCR 129 E6327 Infineon
Hersteller: Infineon
NPN 50V 100mA 150MHz 200mW BCR129E6327HTSA1 BCR129E6327 Infineon TBCR129
Anzahl je Verpackung: 500 Stücke
auf Bestellung 2790 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.055 EUR |
Produktrezensionen
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Technische Details BCR 129 E6327 Infineon
Description: BCR129 - DIGITAL TRANSISTOR, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 150 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: PG-SOT23-3-11, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.
Weitere Produktangebote BCR 129 E6327 nach Preis ab 0.066 EUR bis 0.71 EUR
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BCR 129 E6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR 129 E6327 | Infineon Technologies |
Digital Transistors NPN Silicon Digital TRANSISTOR |
auf Bestellung 20489 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BCR 129 E6327 |
|
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8362+ | 0.066 EUR |
| BCR 129 E6327 |
|
Hersteller: Infineon Technologies
Digital Transistors NPN Silicon Digital TRANSISTOR
Digital Transistors NPN Silicon Digital TRANSISTOR
auf Bestellung 20489 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.71 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.15 EUR |
| 6000+ | 0.13 EUR |