BCR 129 E6327 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8362+ | 0.07 EUR |
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Technische Details BCR 129 E6327 Infineon Technologies
Description: BCR129 - DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Supplier Device Package: PG-SOT23-3-11, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 10 kOhms.
Weitere Produktangebote BCR 129 E6327 nach Preis ab 0.05 EUR bis 0.43 EUR
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BCR 129 E6327 | Hersteller : Infineon Technologies |
Digital Transistors NPN Silicon Digital TRANSISTOR |
auf Bestellung 20501 Stücke: Lieferzeit 10-14 Tag (e) |
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| BCR 129 E6327 | Hersteller : Infineon |
NPN 50V 100mA 150MHz 200mW BCR129E6327HTSA1 BCR129E6327 Infineon TBCR129 Anzahl je Verpackung: 500 Stücke |
auf Bestellung 2790 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR129E6327 | Hersteller : INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ Anzahl je Verpackung: 1 Stücke |
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BCR129E6327 | Hersteller : Infineon Technologies |
Description: BCR129 - DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms |
Produkt ist nicht verfügbar |
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BCR129E6327 | Hersteller : INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 150MHz Base resistor: 10kΩ |
Produkt ist nicht verfügbar |