Technische Details BCR133T-E6327 INFINEON
Description: TRANS PREBIAS NPN 50V 0.1A SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Supplier Device Package: PG-SC75-3D, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 130 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote BCR133T-E6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| BCR133T E6327 | Hersteller : INFINEON | SOT423-WC |
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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BCR 133T E6327 | Hersteller : Infineon Technologies |
 Description: TRANS PREBIAS NPN 50V 0.1A SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SC75-3D Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |
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BCR133TE6327 | Hersteller : Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-11 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 130 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms |
Produkt ist nicht verfügbar |