BCR162E6327 Infineon
Hersteller: Infineon
PNP 50V 100mA 200MHz 200mW BCR162E6327HTSA1 BCR162E6327 Infineon TBCR162
Anzahl je Verpackung: 500 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 0.056 EUR |
Produktrezensionen
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Technische Details BCR162E6327 Infineon
Description: BIPOLAR DIGITAL TRANSISTOR, Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 200 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: PG-SOT23-3-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.
Weitere Produktangebote BCR162E6327 nach Preis ab 0.066 EUR bis 14.3 EUR
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BCR162E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Mounting: SMD Case: SOT23 Type of transistor: PNP Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Base-emitter resistor: 4.7kΩ Base resistor: 4.7kΩ Frequency: 200MHz Polarisation: bipolar Kind of transistor: BRT |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCR 162 E6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23-3-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BCR 162 E6327 | Infineon Technologies |
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR |
auf Bestellung 595 Stücke: Lieferzeit 10-14 Tag (e) |
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| BCR162E6327 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 4.7kΩ
Base resistor: 4.7kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Mounting: SMD
Case: SOT23
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 4.7kΩ
Base resistor: 4.7kΩ
Frequency: 200MHz
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| BCR 162 E6327 |
|
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8013+ | 0.066 EUR |
| BCR 162 E6327 |
|
Hersteller: Infineon Technologies
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
auf Bestellung 595 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.71 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.12 EUR |
| 9000+ | 0.092 EUR |